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Same model may have multiple batches, images only for reference.
IPW60R125P6 Real Image
Same model may have multiple batches, images only for reference.

IPW60R125P6

Part No IPW60R125P6
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description POWER FIELD-EFFECT TRANSISTOR
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 11.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 960µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2660 pF @ 100 V
Power Dissipation (Max) 219W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Standard Package 1 pcs
HTSUS 0000.00.0000
Win Source Part Number 603787-IPW60R125P6
Ultra Librarian 3D Model Ultra Librarian IPW60R125P6 CAD Model

Description

The 603787-IPW60R125P6 is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: CoolMOS™
  • Vdss: 600V
  • Id: 30A
  • Rds On (Max): 125mOhm @ 11.6A and 10V
  • Gate Charge (Qg): 56nC @ 10V
  • Package Type: Through Hole

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.3429 $50.1435
37+ $2.7429 $101.4873
57+ $2.6571 $151.4547
78+ $2.5714 $200.5692
101+ $2.4857 $251.0557
135+ $2.2286 $300.8610
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Availability: 9,920 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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