The IPW60R190P6 is a CoolMOS™ P6 Power MOSFET from Infineon Technologies. This N-channel MOSFET is designed for high-voltage, high-efficiency power conversion applications, utilizing Infineon's advanced superjunction CoolMOS™ technology.

Applications

• Power Factor Correction (PFC) circuits
• Flyback converters
• Half-bridge and full-bridge converters
• Server power supplies
• Lighting applications

Features

• N-Channel MOSFET
• CoolMOS™ superjunction technology
• Low on-resistance RDS(on)
• High blocking voltage
• Low gate charge Qg
• Integrated gate resistor RG

Benefits

• High efficiency power conversion due to low RDS(on) and Qg, minimizing conduction and switching losses.
• Increased power density and miniaturization of power supply designs.
• Simplified gate drive with integrated gate resistor.
• Enhanced system reliability and ruggedness in high-voltage applications.
• Lower operating temperature for improved thermal performance.
• Optimized switching performance for higher efficiency at higher frequencies.

Additional Details

The IPW60R190P6 leverages CoolMOS™ P6 technology to achieve a low on-resistance and reduced switching losses, enabling high efficiency in power conversion applications. The integrated gate resistor simplifies gate drive design and improves EMI performance. The device operates over a wide temperature range. The through-hole package provides easy mounting and good thermal conductivity. The optimized design reduces ringing during switching, enhancing system reliability.