The Infineon Technologies IPW65R045C7 is an N-channel MOSFET transistor with a drain-source breakdown voltage of 650V.

• Continuous Drain Current: 46A (Tc) @ 25°C
• Maximum Rds On: 45 mOhm @ Id, Vgs is 24.9A, 10V
• Gate-Source Threshold Voltage: 4V @ 1.25mA
• Maximum Gate Charge: 93nC @ 10V
• Maximum Input Capacitance: 4340pF @ 400V
• Maximum Gate-Source Voltage: ±20V
• Package: TO-247-3
• Power Dissipation (Max): 227W (Tc)
• Technology: MOSFET
• Operating Temperature Range: -55°C to 150°C (TJ)
• Category: Discrete semiconductor products