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Same model may have multiple batches, images only for reference.
IPW65R420CFDFKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPW65R420CFDFKSA1

Part No IPW65R420CFDFKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 8.7A TO247 / Trans MOSFET N-CH 650V 8.7A 3-Pin(3+Tab) TO-247 Tube
Datasheet
IPW65R420CFDFKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series CoolMOS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 650V
Current - Continuous Drain (Id) @ 25°C 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 340μA
Gate Charge (Qg) (Maximum) @ Vgs 32nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 870pF @ 100V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 83.3W (Tc)
Rds On (Maximum) @ Id, Vgs 420 mOhm @ 3.4A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package PG-TO247-3
Package TO-247-3
Win Source Part Number 776940-IPW65R420CFDFKSA1
Popularity Medium
Supply and Demand Status Limited
Family Name IPW65R420CFD
Introduction Date June 07, 2011
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IPW65R420CFDFKSA1 CAD Model

Description

The Infineon Technologies CoolMOS series MOSFET is a high-quality electronic component that is designed for use in discrete semiconductor products.

  • Continuous Drain Current: 8.7A
  • Maximum Drain-Source Voltage: 650V
  • Drive Voltage: 10V
  • Maximum Power Dissipation: 83.3W
  • Mounting: Through-hole
  • Compliance: Halogen-free
  • ECCN: ECCN regulations
  • Supply: Limited
  • Availability: Expected until 2027

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Quantity Unit Price Ext. Price
20+ $2.8879 $57.7580
49+ $2.3695 $116.1055
76+ $2.2954 $174.4504
104+ $2.2215 $231.0360
135+ $2.1474 $289.8990
180+ $1.9253 $346.5540
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MOQ: 20 pcs
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