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Same model may have multiple batches, images only for reference.
IPW90R120C3 Infineon Technologies
Same model may have multiple batches, images only for reference.

IPW90R120C3

Part No IPW90R120C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 36A TO-247
Datasheet
IPW90R120C3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.5V @ 2.9mA
Max Gate Charge 270nC @ 10V
Max Input Capacitance 6800pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 417W (Tc)
Maximum Rds On at Id,Vgs 120 mOhm @ 26A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 069127-IPW90R120C3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPW90R120C3 CAD Model

Description

The Infineon Technologies 069127-IPW90R120C3 is an N-channel MOSFET transistor with a drain-source breakdown voltage of 900V.

  • Continuous Drain Current: 36A (Tc)
  • Maximum Rds On: 120 mOhm @ 26A, 10V
  • Gate-Source Threshold Voltage: 3.5V @ 2.9mA
  • Maximum Gate Charge: 270nC @ 10V
  • Maximum Input Capacitance: 6800pF @ 100V
  • Mounting Type: Through-hole
  • Package/Case: PG-TO247-3
  • Dimension: TO-247-3
  • Supply and Demand Status: Balanced
  • Status: Active

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12+ $8.9496 $107.3952
18+ $8.6473 $155.6514
25+ $8.0426 $201.0650
33+ $7.7402 $255.4266
41+ $7.4379 $304.9539
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