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SI5468DC-T1-GE3

Part No SI5468DC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6A 1206-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 435pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.3W (Ta), 5.7W (Tc)
Maximum Rds On at Id,Vgs 28 mOhm @ 6.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 028575-SI5468DC-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si5468DC
Introduction Date March 09, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian SI5468DC-T1-GE3 CAD Model

Description

The Si5468DC-T1-GE3 is an N-channel MOSFET from Vishay.

  • Suitability: It is suitable for use in various electronic applications that require high power dissipation
  • Maximum Power Dissipation: 2.3W (Ta) and 5.7W (Tc)
  • Rds On at Id,Vgs: Low
  • Gate-Source Threshold Voltage: High
  • Reliability: It is a reliable and efficient MOSFET that can help improve the performance of your electronic device
  • Popularity: High popularity
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
170+ $0.2973 $50.5410
360+ $0.2785 $100.2600
560+ $0.2691 $150.6960
800+ $0.2502 $200.1600
1,040+ $0.2408 $250.4320
1,300+ $0.2314 $300.8200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 66,000 pieces
MOQ: 170 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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