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Same model may have multiple batches, images only for reference.
SI7119DN-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SI7119DN-T1-GE3

Part No SI7119DN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 200V 1.2A 8-Pin PowerPAK 1212 T/R / MOSFET P-CH 200V 3.8A 1212-8
Datasheet
SI7119DN-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 666pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 1.05 Ohm @ 1A, 10V
Temperature Range - Operating -50°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 1096132-SI7119DN-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si7119DN
Introduction Date November 30, 2006
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI7119DN-T1-GE3 CAD Model

Description

The Vishay 1096132-SI7119DN-T1-GE3 is a P-channel MOSFET that is mounted in SMD (SMT) packaging.

  • Mounting: SMD (SMT)
  • Power Dissipation: 3.7W (Ta), 52W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Maximum Rds On at Id,Vgs: 1.05 Ohm @ 1A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • ROHS3 Compliant: Yes
  • ECCN: EAR99
  • Popularity: high-popularity
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5166 $51.6600
210+ $0.4839 $101.6190
325+ $0.4675 $151.9375
460+ $0.4348 $200.0080
600+ $0.4185 $251.1000
750+ $0.4021 $301.5750
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