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Same model may have multiple batches, images only for reference.
IPW90R500C3XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPW90R500C3XKSA1

Part No IPW90R500C3XKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
IPW90R500C3XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 740µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 100 V
Power Dissipation (Max) 156W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-21
Package / Case TO-247-3
Base Product Number IPW90R500
Other Names SP002548900
Standard Package 30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278319-IPW90R500C3XKSA1
Ultra Librarian 3D Model Ultra Librarian IPW90R500C3XKSA1 CAD Model

Description

The Infineon Technologies CoolMOS™ series MOSFET with the Win Source Part Number 1278319-IPW90R500C3XKSA1 is a discrete semiconductor product with a tube package.

  • Type: N-Channel MOSFET
  • Drain to Source Voltage: 900 V
  • Continuous Drain Current: 11A (Tc)
  • Rds On (Max) @ Id, Vgs: 500mOhm @ 6.6A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 740µA
  • Power Dissipation (Max): 156W (Tc)
  • Mounting Type: Through-hole
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
  • Vgs (Max): ±20V
  • Temperature Range: -55°C ~ 150°C (TJ)
  • ECCN: EAR99

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