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Same model may have multiple batches, images only for reference.
IPZ40N04S58R4ATMA1
Same model may have multiple batches, images only for reference.

IPZ40N04S58R4ATMA1

Part No IPZ40N04S58R4ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 40A 8TSDSON-32 / N-Channel 40 V 40A (Tc) 34W (Tc) Surface Mount PG-TSDSON-8-32
Datasheet
IPZ40N04S58R4ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™-5
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 8.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.4V @ 10µA
Gate Charge (Qg) (Max) @ Vgs 13.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 771 pF @ 25 V
Power Dissipation (Max) 34W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8-32
Package / Case 8-PowerTDFN
Base Product Number IPZ40N04
Standard Package 5,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1351332-IPZ40N04S58R4ATMA1
Ultra Librarian 3D Model Ultra Librarian IPZ40N04S58R4ATMA1 CAD Model

Description

The Infineon Technologies IPZ40N04S58R4ATMA1 is an N-Channel MOSFET transistor designed for use in electronic circuits.

  • Drain to Source Voltage: 40V
  • Power Dissipation: 34W (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Operating Temperature: -55°C to 175°C
  • Packaging: Tape & Reel
  • Standard Package Quantity: 5,000
  • ECCN: EAR99
  • MSL Level: 1
  • REACH: Unaffected

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