The IQE013N04LM6ATMA1 is an N-channel MOSFET transistor from the OptiMOS series of Infineon Technologies.

• FET Type: N-Channel
• Technology: MOSFET
• Voltage Drain to Source (Vdss): 40 V
• Power Dissipation: 2.5 W (Ta) and 107 W (Tc)
• Mounting Type: Surface Mount
• Package/Case: 8-PowerTDFN
• Supplier Device Package: PG-TSON-8-4
• Vgs (Max): ±20V
• Operating Temperature: -55°C to 175°C (TJ)
• Current - Continuous Drain (Id) @ 25°C: 31A (Ta) and 205A (Tc)
• Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id: 2V @ 51µA
• Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V