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Same model may have multiple batches, images only for reference.
IRF123 Real Image
Same model may have multiple batches, images only for reference.

IRF123

Part No IRF123
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL HERMETIC MOS HEXFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V
Power Dissipation (Max) 40W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3
Package / Case TO-204AA, TO-3
Standard Package 442 pcs
MSL Level 3 (168 Hours)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 604191-IRF123
Ultra Librarian 3D Model Ultra Librarian IRF123 CAD Model

Description

The 604191-IRF123 is a single N-channel MOSFET transistor in the category of discrete semiconductor products. It is designed for various power applications and is manufactured by Infineon Technologies.

  • Drain-to-Source Voltage: 60V
  • Continuous Drain Current: 7A
  • On-Resistance: 400mOhm
  • Package: TO-204AA and TO-3
  • Gate Charge: 15nC
  • Input Capacitance: 600pF
  • Status: Active

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2506 $62.5300
115+ $1.0263 $118.0245
175+ $0.9941 $173.9675
245+ $0.9621 $235.7145
315+ $0.9300 $292.9500
420+ $0.8338 $350.1960
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,700 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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