The Infineon Technologies IRF135B203 is an N-Channel MOSFET transistor with a drain-source breakdown voltage of 135V and a continuous drain current of 129A.

• Drain-Source Breakdown Voltage: 135V
• Continuous Drain Current: 129A
• Maximum Power Dissipation: 441W
• Maximum Rds On: 8.4mOhm @ 77A, 10V
• Gate-Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
• Maximum Gate Charge: 270nC @ 10V
• Input Capacitance (Ciss) (Maximum) @ Vds: 9700pF @ 50V
• Operating Temperature Range: -55°C to 175°C
• Package: PG-TO220-3

It has a maximum power dissipation of 441W and a maximum Rds On of 8.4mOhm at 77A, 10V. The MOSFET features a gate-source voltage(th) (Maximum) at Id of 4V at 250μA and a maximum gate charge of 270nC at 10V. The device has an input capacitance (Ciss) (Maximum) at Vds of 9700pF at 50V and can operate in a temperature range of -55°C to 175°C. It comes in a PG-TO220-3 package and is used in various applications such as power supplies, motor control, and lighting.