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Same model may have multiple batches, images only for reference.
IRF1405LPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF1405LPBF

Part No IRF1405LPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 131A TO-262
Datasheet
IRF1405LPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 131A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 260nC @ 10V
Max Input Capacitance 5480pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 5.3 mOhm @ 101A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 205291-IRF1405LPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF1405LPBF CAD Model

Description

The Infineon Technologies 205291-IRF1405LPBF is a medium-popularity electronic component that is balanced in terms of supply and demand.

  • Application: MOSFET
  • Maximum Power Dissipation: 200W
  • Maximum Continuous Drain Current: 131A @ 25°C

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55+ $3.1756 $174.6580
76+ $3.0731 $233.5556
98+ $2.9708 $291.1384
131+ $2.6634 $348.9054
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