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Same model may have multiple batches, images only for reference.
IRF1407S Real Image
Same model may have multiple batches, images only for reference.

IRF1407S

Part No IRF1407S
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss = 75V, Rds(on) = 0.0078Ω, Id = 100A⑥) | MOSFET N-CH 75V 100A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 75V
Id - Continuous Drain Current 100A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 7.8mOhm at 78A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 250nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 5600pF at 25V
Power Dissipation (Maximum) 3.8W, 200W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1186909-IRF1407S
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF1407S CAD Model

Description

The IRF1407S is a MOSFET transistor designed for discrete semiconductor products.

  • Product: IRF1407S
  • Type: MOSFET transistor
  • Application: Discrete semiconductor products
  • Manufacturer: Infineon Technologies
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Power Dissipation: 3.8W, 200W (maximum)
  • Drain-Source Breakdown Voltage: 75V
  • Popularity: Medium

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Quantity Unit Price Ext. Price
50+ $1.0833 $54.1650
115+ $0.8889 $102.2235
175+ $0.8611 $150.6925
245+ $0.8333 $204.1585
315+ $0.8056 $253.7640
420+ $0.7223 $303.3660
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