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Same model may have multiple batches, images only for reference.
IRF143 Real Image
Same model may have multiple batches, images only for reference.

IRF143

Part No IRF143
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 24A TO3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Rds On (Max) @ Id, Vgs 110mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3
Package / Case TO-204AA, TO-3
Standard Package 203 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 0000.00.0000
Win Source Part Number 604223-IRF143
Ultra Librarian 3D Model Ultra Librarian IRF143 CAD Model

Description

The IRF143 is a single N-channel MOSFET from Infineon Technologies. It is a through-hole MOSFET with a TO-204AA, TO-3 package.

  • Manufacturer: Infineon Technologies
  • Channel Type: N-channel
  • Mounting Type: through-hole
  • Package: TO-204AA, TO-3
  • Drain-to-Source Voltage: 60 V
  • Continuous Drain Current: 24A @ 25°C
  • On-Resistance (Max): 110 mOhm @ 15A and 10V
  • Category: discrete semiconductor products
  • Gate-Source Threshold Voltage: 4V @ 250 µA
  • Power Dissipation (Max): 125W @ 25°C (case temperature)
  • Package Quantity: 203 pieces (bulk)

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