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Same model may have multiple batches, images only for reference.
IRF1607 Real Image
Same model may have multiple batches, images only for reference.

IRF1607

Part No IRF1607
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A⑥) | MOSFET N-CH 75V 142A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 75V
Id - Continuous Drain Current 142A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 7.5mOhm at 85A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 320nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 7750pF at 25V
Power Dissipation (Maximum) 380W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1186917-IRF1607
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF1607 CAD Model

Description

The Infineon Technologies IRF1607 is a MOSFET transistor with N-channel polarity.

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 142A
  • Maximum On-Resistance: 7.5mOhm @ 85A and 10V gate-source voltage
  • Package: TO-220AB
  • Power Dissipation: 380W
  • Gate-Source Voltage: +/- 20V
  • Gate Charge: 320nC @ 10V
  • Applications: Discrete semiconductor products
  • Supply and Demand Status: Limited

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