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Same model may have multiple batches, images only for reference.
IRF2204LPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF2204LPBF

Part No IRF2204LPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 170A TO-262
Datasheet
IRF2204LPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 200nC @ 10V
Max Input Capacitance 5890pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 3.6 mOhm @ 130A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1046417-IRF2204LPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF2204LPBF CAD Model

Description

The Infineon Technologies IRF2204LPBF is an N-Channel MOSFET electronic component that has a maximum power dissipation of 200W (Tc).

  • Mounting Technology: Through-Hole
  • Drive Voltage: 10V
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: TO-262 case/package
  • Drain-Source Breakdown Voltage: 40V

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.2034 $58.8476
34+ $3.4490 $117.2660
52+ $3.3412 $173.7424
72+ $3.2335 $232.8120
93+ $3.1257 $290.6901
124+ $2.8023 $347.4852
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Availability: 23,500 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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