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Same model may have multiple batches, images only for reference.
IRF2804STRR7PP
Same model may have multiple batches, images only for reference.

IRF2804STRR7PP

Part No IRF2804STRR7PP
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 160A D2PAK-7
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 260nC @ 10V
Max Input Capacitance 6930pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 1.6 mOhm @ 160A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (7-Lead)
Dimension TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 069252-IRF2804STRR7PP
Popularity Medium
Supply and Demand Status Balance
Quantity per package 800
Ultra Librarian 3D Model Ultra Librarian IRF2804STRR7PP CAD Model

Description

The Infineon Technologies IRF2804STRR7PP is a surface-mount N-channel MOSFET transistor with a drain-source breakdown voltage of 40V and a continuous drain current of 160A at 25°C.

  • Maximum Power Dissipation: 330W (Tc)
  • Low Rds On: 1.6 mOhm @ 160A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 260nC @ 10V
  • Maximum Input Capacitance: 6930pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Package: D2PAK (7-Lead) case
  • Suitable for: use in discrete semiconductor products
  • Popularity: medium popularity
  • Supply and Demand Status: limited

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