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Same model may have multiple batches, images only for reference.
IRF2807ZSTRR Real Image
Same model may have multiple batches, images only for reference.

IRF2807ZSTRR

Part No IRF2807ZSTRR
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 75A D2PAK
Datasheet
IRF2807ZSTRR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 3270pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 170W (Tc)
Maximum Rds On at Id,Vgs 9.4 mOhm @ 53A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046429-IRF2807ZSTRR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF2807ZSTRR CAD Model

Description

The Vishay IRF2807ZSTRR is an N-channel MOSFET that is designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 170W (Tc)
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 75A (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 9.4 mOhm @ 53A, 10V
  • Case: D2PAK
  • Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supply and Demand Status: Balanced

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