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Same model may have multiple batches, images only for reference.
IRF3415PBF Real Image
Same model may have multiple batches, images only for reference.

IRF3415PBF

Part No IRF3415PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 43A TO-220AB
Datasheet
IRF3415PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 200nC @ 10V
Max Input Capacitance 2400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 42 mOhm @ 22A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069264-IRF3415PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF3415PBF CAD Model

Description

The Infineon Technologies IRF3415PBF is a N-Channel MOSFET transistor, designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 200W (Tc)
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 43A (Tc) @ 25°C
  • Maximum Rds On: 42 mOhm @ 22A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 200nC @ 10V
  • Package: TO-220AB case
  • Mounting Type: through hole
  • Technology: MOSFET
  • Polarity: N-Channel
  • Temperature Range: -55°C to 175°C (TJ)
  • Supply and Demand Status: balanced

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115+ $0.8836 $101.6140
180+ $0.8538 $153.6840
255+ $0.7941 $202.4955
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410+ $0.7344 $301.1040
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