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Same model may have multiple batches, images only for reference.
IRF350
Same model may have multiple batches, images only for reference.

IRF350

Part No IRF350
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 87A TO-220AB
Datasheet
IRF350 Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 87A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 54nC @ 10V
Max Input Capacitance 2150pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 143W (Tc)
Maximum Rds On at Id,Vgs 9.2 mOhm @ 52A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 069266-IRF350
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF350 CAD Model

Description

The Infineon Technologies IRF350 is a N-channel MOSFET used in power management.

  • Maximum Power Dissipation: 143W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 87A (Tc) @ 25°C
  • Maximum Rds On: 9.2 mOhm @ 52A, 10V
  • Mounting Type: through hole
  • Package: TO-220AB case
  • Gate-Source Threshold Voltage: 4V @ 100μA
  • Max Gate Charge: 54nC @ 10V
  • Maximum Input Capacitance: 2150pF @ 25V
  • Application: commonly used in power management applications
  • Popularity: medium popularity
  • Supply and Demand Status: limited

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