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Same model may have multiple batches, images only for reference.
IRF3709ZPBF Real Image
Same model may have multiple batches, images only for reference.

IRF3709ZPBF

Part No IRF3709ZPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 87A TO-220AB
Datasheet
IRF3709ZPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 87A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 26nC @ 4.5V
Max Input Capacitance 2130pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 79W (Tc)
Maximum Rds On at Id,Vgs 6.3 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1046476-IRF3709ZPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF3709ZPBF CAD Model

Description

The IRF3709ZPBF is a MOSFET semiconductor device that features N-Channel transistor polarity from Infineon Technologies.

  • Transistor Polarity: N-Channel
  • Packaging: TO-220AB
  • Maximum Power Dissipation: 79W (Tc)
  • Continuous Drain Current: 87A (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Gate-Source Voltage: ±20V
  • Input Capacitance: 2130pF @ 15V
  • Drive Voltage: 4.5V, 10V
  • Gate-Source Threshold Voltage: 2.25V @ 250μA
  • Maximum Rds On: 6.3 mOhm @ 21A, 10V
  • Operating Temperature: -55°C to 175°C (TJ)

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