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Same model may have multiple batches, images only for reference.
IRF3710ZSPBF
Same model may have multiple batches, images only for reference.

IRF3710ZSPBF

Part No IRF3710ZSPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 59A D2PAK
Datasheet
IRF3710ZSPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 2900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 160W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 069282-IRF3710ZSPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF3710ZSPBF CAD Model

Description

The Infineon Technologies IRF3710ZSPBF is a N-channel MOSFET used in power management.

  • Maximum Power Dissipation: 160W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 59A (Tc)
  • Maximum Rds On @ Id,Vgs: 18 mOhm @ 35A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 120nC @ 10V
  • Maximum Input Capacitance: 2900pF @ 25V

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167+ $2.0859 $348.3453
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