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IRF3711STRL Infineon Technologies IRF3711STRL real image
Same model may have multiple batches, images only for reference.
IRF3711STRL Infineon Technologies IRF3711STRL real image
IRF3711STRL Infineon Technologies IRF3711STRL real image
Same model may have multiple batches, images only for reference.

IRF3711STRL

Part No IRF3711STRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 110A D2PAK
Datasheet
IRF3711STRL Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 44nC @ 4.5V
Max Input Capacitance 2980pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 120W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 138960-IRF3711STRL
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF3711STRL CAD Model

Description

The Infineon Technologies IRF3711STRL is a N-channel MOSFET transistor that was previously used in the electronics industry.

  • Maximum Power Dissipation: 3.1W @ Ta and 120W @ Tc
  • Drive Voltage: 4.5V
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 110A (Tc)
  • Maximum Rds On @ Id,Vgs: 6 mOhm @ 15A, 10V
  • Maximum Gate Charge: 44nC @ 4.5V
  • Maximum Input Capacitance: 2980pF @ 10V

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90+ $1.3015 $117.1350
140+ $1.2608 $176.5120
190+ $1.2201 $231.8190
245+ $1.1794 $288.9530
330+ $1.0574 $348.9420
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