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Same model may have multiple batches, images only for reference.
IRF3805S-7PPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF3805S-7PPBF

Part No IRF3805S-7PPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 160A D2PAK-7
Datasheet
IRF3805S-7PPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 200nC @ 10V
Max Input Capacitance 7820pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 2.6 mOhm @ 140A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK (7-Lead)
Dimension TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Win Source Part Number 139294-IRF3805S-7PPBF
Family Name IRF3805S-7P
Introduction Date December 05, 2006
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF3805S-7PPBF CAD Model

Description

The Infineon Technologies IRF3805S-7PPBF is a MOSFET technology-based electronic component.

  • Power Dissipation (max): 300W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current @ 25°C: 160A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 200nC @ 10V
  • Maximum Rds On @ Id, Vgs: 2.6 mOhm @ 140A, 10V

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