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IRF520NLPBF

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Part No	IRF520NLPBF
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 100V 9.7A TO262 / N-Channel 100 V 9.7A (Tc) 3.8W (Ta), 48W (Tc) Through Hole TO-262
Datasheet	IRF520NLPBF Datasheet
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Infineon Technologies
Series	HEXFET®
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	200mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	330 pF @ 25 V
Power Dissipation (Max)	3.8W (Ta), 48W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	*IRF520NLPBF
Standard Package	50
Win Source Part Number	1119598-IRF520NLPBF
Ultra Librarian 3D Model	Ultra Librarian IRF520NLPBF CAD Model

Alternative Products

Description

The IRF520NLPBF is an N-Channel MOSFET transistor with a drain-source voltage of 100V and a continuous drain current of 9.7A @ 25°C.

Manufacturer: Infineon Technologies
FET Type: N-Channel MOSFET
Drain-Source Voltage: 100V
Continuous Drain Current: 9.7A @ 25°C
Maximum Rds On: 200mOhm @ 5.7A and 10V
Gate-Source Threshold Voltage: 4V @ 250μA
Maximum Gate Charge: 25 nC @ 10 V
Input Capacitance: 330 pF @ 25 V
Operating Temperature Range: -55°C to 175°C
Package Type: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single

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