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IRF5305PBF

Part No IRF5305PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 55V 31A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 63nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 110W (Tc)
Maximum Rds On at Id,Vgs 60 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017435-IRF5305PBF
Family Name IRF5305
Introduction Date October 31, 2003
ECCN EAR99
Country of Origin China, Republic of Korea
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF5305PBF CAD Model

Description

The Infineon Technologies IRF5305PBF is a P-channel MOSFET that is widely used in power switching applications.

  • Features: low on-state resistance, low gate charge, and fast switching speed
  • Suitable for: high efficiency power conversion
  • Halogen-Free: Halogen-free
  • RoHS: compliant with the RoHS directive
  • Package: through-hole TO-220AB
  • Performance and Reliability: excellent
  • Choice: popular choice among designers of power electronics

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4721 $51.9310
260+ $0.3873 $100.6980
400+ $0.3752 $150.0800
555+ $0.3631 $201.5205
715+ $0.3510 $250.9650
955+ $0.3147 $300.5385
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 36,630 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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