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Same model may have multiple batches, images only for reference.
IRF5801TRPBF
Same model may have multiple batches, images only for reference.

IRF5801TRPBF

Part No IRF5801TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 600MA 6-TSOP
Datasheet
IRF5801TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 3.9nC @ 10V
Max Input Capacitance 88pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 360mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro6(TSOP-6)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 125931-IRF5801TRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF5801TRPBF CAD Model

Description

The Infineon Technologies IRF5801TRPBF is a N-channel MOSFET with a maximum power dissipation of 2W (Ta).

  • Power Dissipation: 2W (Ta)
  • Supply and Demand Status: limited
  • Package: reel-TR
  • Mounting Type: SMD (SMT)
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 200V
  • Maximum Rds On (Id,Vgs): 2.2 Ohm @ 360mA, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2227 $50.1075
550+ $0.1827 $100.4850
850+ $0.1770 $150.4500
1,170+ $0.1713 $200.4210
1,510+ $0.1656 $250.0560
2,025+ $0.1485 $300.7125
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,500 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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