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Same model may have multiple batches, images only for reference.
IRF5802TRPBF
Same model may have multiple batches, images only for reference.

IRF5802TRPBF

Part No IRF5802TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 0.9A 6-TSOP
Datasheet
IRF5802TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 250μA
Max Gate Charge 6.8nC @ 10V
Max Input Capacitance 88pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 540mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro6(TSOP-6)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 017440-IRF5802TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF5802TRPBF CAD Model

Description

The Infineon Technologies IRF5802TRPBF is an N-channel MOSFET with a package of Micro6(TSOP-6).

  • Case/Package: Micro6(TSOP-6)
  • Mounting Type: SMD (SMT)
  • Power Dissipation: 2W (Ta)
  • Status: active
  • Temperature Range: -55°C to 150°C (TJ)
  • Gate-Source Threshold Voltage: 5.5V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Supply and Demand Status: limited and it is a common-used part
  • MSL Level: 1 (unlimited)

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Pricing & Ordering

Quantity Unit Price Ext. Price
280+ $0.1797 $50.3160
680+ $0.1474 $100.2320
1,055+ $0.1428 $150.6540
1,450+ $0.1382 $200.3900
1,875+ $0.1336 $250.5000
2,505+ $0.1198 $300.0990
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 28,070 pieces
MOQ: 280 pcs
Order Increment : 1 pcs
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