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Same model may have multiple batches, images only for reference.
IRF5803D2
Same model may have multiple batches, images only for reference.

IRF5803D2

Part No IRF5803D2
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 3.4A 8-SOIC
Datasheet
IRF5803D2 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 37nC @ 10V
Max Input Capacitance 1110pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 112 mOhm @ 3.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 121865-IRF5803D2
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF5803D2 CAD Model

Description

The Infineon Technologies IRF5803D2 is a P-Channel MOSFET with a built-in Schottky diode that is designed for use in a variety of applications.

  • Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 40V
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 37nC @ 10V
  • Case/Package: 8-SO package
  • Maximum Rds On: 112 mOhm @ 3.4A and 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4992 $59.9040
285+ $0.4097 $116.7645
440+ $0.3969 $174.6360
605+ $0.3841 $232.3805
780+ $0.3712 $289.5360
1,045+ $0.3329 $347.8805
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Availability: 14,000 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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