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IPP120N06NG

Part No IPP120N06NG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 75A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 94μA
Max Gate Charge 62nC @ 10V
Max Input Capacitance 2100pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 158W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-3-1
Dimension TO-220-3
Win Source Part Number 069055-IPP120N06NG
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPP120N06NG CAD Model

Description

The Infineon Technologies IPP120N06NG is an N-Channel MOSFET with a Drain-Source Breakdown Voltage of 60V and Continuous Drain Current at 25°C of 75A (Tc).

  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 75A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 94μA
  • Max Gate Charge: 62nC @ 10V
  • Max Input Capacitance: 2100pF @ 30V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 12 mOhm @ 75A, 10V
  • Category: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Operating Temperature Range: -55°C to 175°C (TJ)
  • Case / Package: PG-TO220-3-1
  • Dimension: TO-220-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9313 $57.9390
75+ $1.5847 $118.8525
115+ $1.5352 $176.5480
160+ $1.4857 $237.7120
205+ $1.4361 $294.4005
270+ $1.2876 $347.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 600 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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