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Same model may have multiple batches, images only for reference.
IRF5810
Same model may have multiple batches, images only for reference.

IRF5810

Part No IRF5810
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 2.9A 6TSOP
Datasheet
IRF5810 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.9A
Maximum Rds On at Id,Vgs 90 mOhm @ 2.9A, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 9.6nC @ 4.5V
Max Input Capacitance 650pF @ 16V
Maximum Power Dissipation 960mW
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 121156-IRF5810
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian IRF5810 CAD Model

Description

The Infineon Technologies IRF5810 is a dual P-channel logic level gate FET designed for use in industrial power management applications.

  • Maximum Power Dissipation: 960mW
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: 6-TSOP case
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current (25°C): 2.9A @ 25°C
  • Gate-Source Threshold Voltage: 1.2V @ 250μA
  • Maximum Gate Charge: 9.6nC @ 4.5V
  • Maximum Input Capacitance: 650pF @ 16V
  • Maximum Rds on (Id,Vgs): 90 mOhm @ 2.9A, 4.5V
  • Supply and Demand: balanced

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