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Same model may have multiple batches, images only for reference.
IRF5M5210SCV
Same model may have multiple batches, images only for reference.

IRF5M5210SCV

Part No IRF5M5210SCV
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) -21 A
Drain to Source Breakdown Voltage -100 V
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Pins 3
On-State Resistance 100 mΩ
Power Dissipation 125 W
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1012874-IRF5M5210SCV
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRF5M5210SCV CAD Model

Description

The Infineon Technologies IRF5M5210SCV is an N-channel MOSFET transistor that is ideal for use in transistors - FETs, MOSFETs - RF applications.

  • Channel Type: N-Channel
  • Application: RF
  • Power Dissipation: 125W
  • Number of Pins: 3
  • Drain to Source Voltage: -100V
  • Gate to Source Voltage: 20V
  • Continuous Drain Current: -21A
  • On-State Resistance: 100mΩ
  • RoHS: Compliant
  • Radiation Hardening: No
  • Minimum Operating Temperature: -55°C
  • Maximum Operating Temperature: 150°C
  • Popularity Rating: Low
  • Supply and Demand Status: Shortage

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