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Same model may have multiple batches, images only for reference.
IRF5N5210SCV
Same model may have multiple batches, images only for reference.

IRF5N5210SCV

Part No IRF5N5210SCV
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) -31 A
Drain to Source Breakdown Voltage -100 V
Drain to Source Resistance 60 mΩ
Drain to Source Voltage (Vdss) -100 V
Gate to Source Voltage (Vgs) 20 V
Height 3.58 mm
Max Junction Temperature (Tj) 150 °C
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Channels 1
Number of Pins 3
On-State Resistance 100 mΩ
Packaging Bulk
Power Dissipation 125 W
Radiation Hardening No
RoHS Compliant
Schedule B 8541290080
Turn-Off Delay Time 103 ns
Turn-On Delay Time 28 ns
Win Source Part Number 1012011-IRF5N5210SCV
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRF5N5210SCV CAD Model

Description

The IRF5N5210SCV is a MOSFET transistor that is designed for use in RF applications.

  • Drain to Source Voltage (Vdss): -100 V
  • Power Dissipation: 125 W
  • Number of Channels: 1
  • Number of Pins: 3
  • Temperature Range: -55 °C to 150 °C
  • Continuous Drain Current (ID): -31 A
  • Drain to Source Breakdown Voltage: -100 V
  • Drain to Source Resistance: 60 mΩ
  • On-State Resistance: 100 mΩ
  • Turn-On Delay Time: 28 ns
  • Turn-Off Delay Time: 103 ns
  • Gate to Source Voltage (Vgs): 20 V

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