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IRF6218STRLPBF Real Image IRF6218STRLPBF real image10304
Same model may have multiple batches, images only for reference.
IRF6218STRLPBF Real Image IRF6218STRLPBF real image10304
IRF6218STRLPBF Real Image IRF6218STRLPBF real image10304
Same model may have multiple batches, images only for reference.

IRF6218STRLPBF

Part No IRF6218STRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 150V 27A D2PAK
Datasheet
IRF6218STRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 110nC @ 10V
Max Input Capacitance 2210pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 150 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046531-IRF6218STRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6218STRLPBF CAD Model

Description

The Infineon Technologies IRF6218STRLPBF MOSFET is a P-channel MOSFET transistor that comes in a D2PAK package.

  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 27A @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 110nC @ 10V
  • Maximum Input Capacitance: 2210pF @ 25V
  • Maximum Rds On @ Id,Vgs: 150 mOhm @ 16A, 10V
  • Applications: suitable for use in Discrete Semiconductor Products
  • Mounting: SMD (SMT) technology
  • Power Dissipation: 250W (Tc)
  • Operating Temperature: -55°C to 175°C (TJ)

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