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Same model may have multiple batches, images only for reference.
IRF630NS Real Image
Same model may have multiple batches, images only for reference.

IRF630NS

Part No IRF630NS
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) | MOSFET N-CH 200V 9.3A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 9.3A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 300mOhm at 5.4A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 35nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 575pF at 25V
Power Dissipation (Maximum) 82W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 200
MSL Level 1 (Unlimited)
Win Source Part Number 1187101-IRF630NS
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF630NS CAD Model

Description

The Infineon Technologies IRF630NS is an N-Channel MOSFET transistor in a D2PAK package. IRF630NS from Infineon Technologies.

  • Drain-Source Breakdown Voltage (Vdss): 200V
  • Continuous Drain Current: 9.3A
  • Maximum Power Dissipation: 82W
  • Gate-Source Voltage (th): 4V @ 250μA
  • Package: tube
  • Manufacturer Pack Quantity: 200
  • MSL Level: 1 (Unlimited)

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.4856 $50.9880
220+ $0.4549 $100.0780
345+ $0.4395 $151.6275
490+ $0.4088 $200.3120
640+ $0.3934 $251.7760
795+ $0.3781 $300.5895
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Availability: 15,324 pieces
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