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Same model may have multiple batches, images only for reference.
IRF6604TR1
Same model may have multiple batches, images only for reference.

IRF6604TR1

Part No IRF6604TR1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 30V 12A 7-Pin Direct-FET MQ T/R / MOSFET N-CH 30V 12A DIRECTFET
Datasheet
IRF6604TR1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V
Gate-Source Threshold Voltage 2.1V @ 250μA
Max Gate Charge 26nC @ 4.5V
Max Input Capacitance 2270pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.3W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 11.5 mOhm @ 12A, 7V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MQ
Dimension DirectFET Isometric MQ
Win Source Part Number 069310-IRF6604TR1
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 1k pcs
Family Name IRF6604
Introduction Date October 29, 2002
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRF6604TR1 CAD Model

Description

The Infineon Technologies 069310-IRF6604TR1 is a MOSFET with N-channel polarity.

  • Power Dissipation: 2.3W (Ta) and 42W (Tc)
  • Family: IRF6604
  • Supply and Demand Status: balanced
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On at Id,Vgs: 11.5 mOhm @ 12A, 7V
  • Alternative Parts: NTLMS4502NR2G, NTLMS4502NR2, and IRF6604TRPBF

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.1282 $59.4358
46+ $2.5666 $118.0636
70+ $2.4865 $174.0550
96+ $2.4063 $231.0048
125+ $2.3261 $290.7625
167+ $2.0855 $348.2785
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Availability: 2,340 pieces
MOQ: 19 pcs
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