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SIR496DP-T1-GE3

Part No SIR496DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 20V 25.7A 8-Pin PowerPAK SO T/R / MOSFET N-CH 20V 35A PPAK SO-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 1570pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 5W (Ta), 27.7W (Tc)
Maximum Rds On at Id,Vgs 4.5 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK SO-8
Dimension PowerPAK SO-8
Win Source Part Number 136513-SIR496DP-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name SiR496DP
Introduction Date September 03, 2008
ECCN EAR99
Country of Origin China
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SIR496DP-T1-GE3 CAD Model

Description

The Vishay MOSFET is a high-popularity electronic component with a sufficient supply and demand status.

  • Power Dissipation: 5W (Ta) and 27.7W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 35A (Tc)
  • Maximum Rds On at Id, Vgs: 4.5 mOhm @ 20A, 10V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7461 $52.2270
165+ $0.6122 $101.0130
255+ $0.5931 $151.2405
350+ $0.5740 $200.9000
455+ $0.5548 $252.4340
605+ $0.4974 $300.9270
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 250 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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