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IRF6613TR1PBF

Part No IRF6613TR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 23A DIRECTFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 23A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 63nC @ 4.5V
Max Input Capacitance 5950pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 3.4 mOhm @ 23A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MT
Dimension DirectFET Isometric MT
Win Source Part Number 108061-IRF6613TR1PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6613TR1PBF CAD Model

Description

The Infineon Technologies IRF6613TR1PBF is an N-Channel MOSFET that comes in a DIRECTFET MT case/package.

  • Product Category: Discrete Semiconductor Product
  • Maximum Power Dissipation: 2.8W (Ta), 89W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Operating Temperature Range: -40°C to 150°C (TJ)
  • Continuous Drain Current at 25°C: 23A (Ta), 150A (Tc)
  • Gate-Source Threshold Voltage: 2.25V @ 250μA
  • Maximum Rds On at Id, Vgs: 3.4 mOhm @ 23A, 10V
  • Lifecycle Status: Obsolete(EOL)
  • Popularity: Medium popularity
  • Supply and Demand Status: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.2987 $50.3896
20+ $5.1682 $103.3640
30+ $5.0067 $150.2010
42+ $4.8452 $203.4984
54+ $4.6837 $252.9198
72+ $4.1992 $302.3424
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 67,000 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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