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Same model may have multiple batches, images only for reference.
SI3951DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3951DV-T1-GE3

Part No SI3951DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 2.7A 6-TSOP
Datasheet
SI3951DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.7A
Maximum Rds On at Id,Vgs 115 mOhm @ 2.5A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 5.1nC @ 5V
Max Input Capacitance 250pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1095874-SI3951DV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3951DV-T1-GE3 CAD Model

Description

The Vishay SI3951DV-T1-GE3 is a dual P-channel MOSFET that is ideal for use in a range of applications, including power management, battery charging, and motor control.

  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 20V
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 5.1nC @ 5V
  • Drive Voltages: The Vishay SI3951DV-T1-GE3 is compatible with a range of drive voltages, including 4.5V and 10V.
  • Package: Comes in a 6-TSOP package that is suitable for use in a range of different products.

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