The Infineon Technologies IRF6619TR1 is an N-Channel MOSFET transistor that is suitable for use in discrete semiconductor products.

• Maximum Power Dissipation: 2.8W (Ta) and 89W (Tc)
• Drive Voltage: 4.5V (Max Rds On) and 10V (Min Rds On)
• Lifecycle Status: Obsolete (EOL)
• Temperature Range: -40°C to 150°C (TJ)
• Case/Package: DirectFET MX
• Dimension: DirectFET Isometric MX
• Drain-Source Breakdown Voltage: 20V
• Continuous Drain Current at 25°C: 30A (Ta) and 150A (Tc)
• Gate-Source Threshold Voltage: 2.45V @ 250μA
• Maximum Gate Charge: 57nC @ 4.5V
• Maximum Input Capacitance: 5040pF @ 10V
• Maximum Rds On at Id, Vgs: 2.2 mOhm @ 30A, 10V