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Same model may have multiple batches, images only for reference.
IRF6623TRPBF
Same model may have multiple batches, images only for reference.

IRF6623TRPBF

Part No IRF6623TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 16A DIRECTFET
Datasheet
IRF6623TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 16A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1360pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.4W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 5.7 mOhm @ 15A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET ST
Dimension DirectFET Isometric ST
Win Source Part Number 017469-IRF6623TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF6623TRPBF CAD Model

Description

The Infineon Technologies IRF6623TRPBF is a high popularity N-channel MOSFET transistor that comes in a DIRECTFET ST package.

  • Maximum Power Dissipation: 1.4W (Ta), 42W (Tc)
  • Continuous Drain Current: Up to 16A (Ta), 55A (Tc) @ 25°C
  • Applications: Suitable for various electronic applications that require an N-channel MOSFET transistor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6109 $56.3815
80+ $1.3218 $105.7440
120+ $1.2805 $153.6600
165+ $1.2392 $204.4680
210+ $1.1979 $251.5590
280+ $1.0740 $300.7200
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,066 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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