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Same model may have multiple batches, images only for reference.
2N3250A Real Image
Same model may have multiple batches, images only for reference.

2N3250A

Part No 2N3250A
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description TRANS PNP 60V 0.2A TO18
Datasheet
2N3250A Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Active
Transistor Polarity PNP
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 500mV @ 5mA, 50mA
Collector Cut-off Current(Max) 10μA (ICBO)
Typical Gain (hFE) (Min) 50 @ 10mA, 1V
Maximum Power Dissipation 360mW
Temperature Range - Operating -65°C to 200°C (TJ)
Mounting Through Hole
Case / Package TO-39 (TO-205AD)
Win Source Part Number 133712-2N3250A
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian 2N3250A CAD Model

Description

2N3250A - Enhanced Transistor for Improved Performance

The 2N3250A is an upgraded version of the 2N3250, providing improved electrical characteristics for more demanding applications. With enhanced thermal and electrical properties, it is the preferred choice for high stability and performance.

  • Projects and Applications:
    • Industrial motor drives
    • High-frequency signal processing
    • Advanced power supply units
  • Features and Benefits:
    • Improved collector current capacity
    • Superior voltage handling
    • Enhanced thermal dissipation
  • Additional Details:
    • Superior junction-to-case thermal resistance
    • Ideal for high-reliability circuits
    • Advanced design for seamless integration

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