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SI7455DP-T1-GE3

Part No SI7455DP-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5160 pF @ 40 V
Power Dissipation (Max) 5.2W (Ta), 83.3W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Base Product Number SI7455
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277492-SI7455DP-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI7455DP-T1-GE3 CAD Model

Description

The Vishay Siliconix SI7455DP-T1-GE3 is a P-channel MOSFET transistor that features a PowerPAK® SO-8 package.

  • Drain to Source Voltage (Vdss): 80 V
  • Current Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 10.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc)
  • Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 40 V
  • Reverse Recovery Time (trr): 1.8 µs
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $2.2439 $67.3170
65+ $1.8412 $119.6780
100+ $1.7837 $178.3700
135+ $1.7262 $233.0370
175+ $1.6687 $292.0225
235+ $1.4960 $351.5600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,640 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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