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Same model may have multiple batches, images only for reference.
IRF6626TR1PBF
Same model may have multiple batches, images only for reference.

IRF6626TR1PBF

Part No IRF6626TR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16A DIRECTFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16A (Ta), 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 250μA
Max Gate Charge 29nC @ 4.5V
Max Input Capacitance 2380pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.2W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 5.4 mOhm @ 16A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET ST
Dimension DirectFET Isometric ST
Win Source Part Number 136780-IRF6626TR1PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF6626TR1PBF CAD Model

Description

The Infineon Technologies IRF6626TR1PBF is a N-channel MOSFET transistor that is designed to operate in a wide temperature range of -40°C to 150°C.

  • Maximum Power Dissipation: 2.2W (Ta) and 42W (Tc)
  • Continuous Drain Current: Up to 16A (Ta) and 72A (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On at Id,Vgs: 5.4 mOhm @ 16A, 10V
  • Package: DirectFET ST case
  • Mounting: SMD (SMT) technology
  • Supply and Demand Status: Limited.

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19+ $9.5773 $181.9687
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44+ $8.0330 $353.4520
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