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Same model may have multiple batches, images only for reference.
IRF6635TR1
Same model may have multiple batches, images only for reference.

IRF6635TR1

Part No IRF6635TR1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 32A DIRECTFET
Datasheet
IRF6635TR1 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 32A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 250μA
Max Gate Charge 71nC @ 4.5V
Max Input Capacitance 5970pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 1.8 mOhm @ 32A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 122793-IRF6635TR1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6635TR1 CAD Model

Description

The Infineon Technologies IRF6635TR1 is an N-Channel MOSFET transistor.

  • Maximum Power Dissipation: 2.8W (Ta) and 89W (Tc)
  • Package: reel - TR with SMD (SMT) mounting technology
  • Drive Voltage: 4.5V (Max Rds On) and 10V (Min Rds On)
  • Status: obsolete (EOL)
  • Temperature Range: -40°C to 150°C (TJ)
  • Case/Package: DirectFET MX case/package has a dimension of DirectFET Isometric MX
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 32A (Ta), 180A (Tc)
  • Gate-Source Threshold Voltage: 2.35V @ 250μA
  • Maximum Gate Charge: 71nC @ 4.5V
  • Maximum Input Capacitance: 5970pF @ 15V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 1.8 mOhm @ 32A, 10V
  • Supply and Demand Status: balanced

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