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Same model may have multiple batches, images only for reference.
IRF6668TRPBF
Same model may have multiple batches, images only for reference.

IRF6668TRPBF

Part No IRF6668TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 55A DIRECTFET
Datasheet
IRF6668TRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.9V @ 100μA
Max Gate Charge 31nC @ 10V
Max Input Capacitance 1320pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 15 mOhm @ 12A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MZ
Dimension DirectFET Isometric MZ
Win Source Part Number 017476-IRF6668TRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF6668TRPBF CAD Model

Description

The Infineon Technologies IRF6668TRPBF is a medium popularity N-channel MOSFET transistor that comes in a DIRECTFET MZ package.

  • Maximum Power Dissipation: 2.8W (Ta), 89W (Tc)
  • Continuous Drain Current @ 25°C: up to 55A (Tc)
  • Application: suitable for various electronic applications that require an N-channel MOSFET transistor

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1642 $52.3890
105+ $0.9553 $100.3065
165+ $0.9254 $152.6910
225+ $0.8956 $201.5100
290+ $0.8657 $251.0530
390+ $0.7762 $302.7180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 43,800 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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