The Infineon Technologies 017477-IRF6691TR1 is a N-Channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 32A (Ta), 180A (Tc).

• Maximum Rds On @ Id, Vgs: 1.8 mOhm @ 15A, 10V
• Gate-Source Threshold Voltage: 2.5V @ 250μA
• Maximum Gate-Source Voltage: ±12V
• Max Gate Charge: 71nC @ 4.5V
• Package: packaged in a DirectFET MT
• Dimension: DirectFET Isometric MT
• Power Dissipation: 2.8W (Ta), 89W (Tc)
• Suitability: suitable for use in discrete semiconductor products
• Status: obsolete (EOL) but is still commonly used in the market with a high popularity