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Same model may have multiple batches, images only for reference.
IRF6710S2TR1PBF
Same model may have multiple batches, images only for reference.

IRF6710S2TR1PBF

Part No IRF6710S2TR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 12A DIRECTFET
Datasheet
IRF6710S2TR1PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 12A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 25μA
Max Gate Charge 13nC @ 4.5V
Max Input Capacitance 1190pF @ 13V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.8W (Ta), 15W (Tc)
Maximum Rds On at Id,Vgs 5.9 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET S1
Dimension DirectFET Isometric S1
Win Source Part Number 101257-IRF6710S2TR1PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6710S2TR1PBF CAD Model

Description

The IRF6710S2TR1PBF is an N-channel MOSFET transistor from Infineon Technologies.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 12A @ 25°C
  • Maximum Power Dissipation: 1.8W @ Ta and 15W @ Tc
  • Gate-Source Threshold Voltage: 2.4V @ 25μA
  • Maximum Gate Charge: 13nC @ 4.5V
  • Maximum Input Capacitance: 1190pF @ 13V
  • Maximum Rds On at Id,Vgs: 5.9 mOhm @ 12A, 10V
  • Package: DirectFET S1
  • Operating Temperature Range: -55°C to 175°C (TJ)

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