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IRF6715MTR1PBF

Part No IRF6715MTR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 34A DIRECTFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 34A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 100μA
Max Gate Charge 59nC @ 4.5V
Max Input Capacitance 5340pF @ 13V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 78W (Tc)
Maximum Rds On at Id,Vgs 1.6 mOhm @ 34A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 137161-IRF6715MTR1PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF6715MTR1PBF CAD Model

Description

The IRF6715MTR1PBF is a MOSFET transistor from Infineon Technologies used in discrete semiconductor products.

  • Transistor Type: N-channel
  • Maximum Power Dissipation: 2.8W (Ta), 78W (Tc)
  • Drain-Source Breakdown Voltage: 25V
  • Package: DirectFET MX package
  • Continuous Drain Current: 34A (Ta), 180A (Tc)
  • Maximum Rds On at Id, Vgs: 1.6 mOhm @ 34A, 10V
  • Supply and Demand Status: limited
  • Product Status: obsolete
  • Applications: DC-DC converters, motor control, and power management

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.2337 $51.3751
55+ $1.8328 $100.8040
85+ $1.7756 $150.9260
117+ $1.7183 $201.0411
151+ $1.6610 $250.8110
202+ $1.4892 $300.8184
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 34,006 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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